| Parameters |
| Mfr |
Central Semiconductor Corp |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 P-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
860mA (Ta) |
| Rds On (Max) @ Id, Vgs |
150mOhm @ 950mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
3.56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 16V |
| Power - Max |
1.65W (Ta) |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-TDFN Exposed Pad |
| Supplier Device Package |
TLM832D |
| Base Product Number |
CTLDM8120 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
1514-CTLDM8120-M832DBK |
| Standard Package |
1 |
Mosfet Array 20V 860mA (Ta) 1.65W (Ta) Surface Mount TLM832D