Parameters |
Mfr |
Central Semiconductor Corp |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
860mA (Ta) |
Rds On (Max) @ Id, Vgs |
150mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
3.56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 16V |
Power - Max |
1.65W (Ta) |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-TDFN Exposed Pad |
Supplier Device Package |
TLM832D |
Base Product Number |
CTLDM8120 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
1514-CTLDM8120-M832DBK |
Standard Package |
1 |
Mosfet Array 20V 860mA (Ta) 1.65W (Ta) Surface Mount TLM832D