Vishay Siliconix SIHG22N60E-E3

SIHG22N60E-E3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHG22N60E-E3
Package: Tube
Datasheet: PDF
Stock: 9835
SKU: SIHG22N60E-E3
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Unit Price: $4.4500

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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG22
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SIHG22N60EE3
Standard Package	25

N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-247AC