Toshiba Semiconductor and Storage TK18E10K3,S1X(S

TK18E10K3,S1X(S

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK18E10K3,S1X(S
Package: Tube
Datasheet: PDF
Stock: 6828
SKU: TK18E10K3,S1X(S
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIV
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Rds On (Max) @ Id, Vgs	42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	TK18E10
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 100 V 18A (Ta) Through Hole TO-220-3