Parameters | |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | - |
Technology | - |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Base Product Number | TK35E10 |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | TK35E10K3S1SSQ |
Standard Package | 50 |