Toshiba Semiconductor and Storage TJ15P04M3,RQ(S

TJ15P04M3,RQ(S

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TJ15P04M3,RQ(S
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 878
SKU: TJ15P04M3,RQ(S
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	36mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	29W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TJ15P04
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000

P-Channel 40 V 15A (Ta) 29W (Tc) Surface Mount DPAK