Toshiba Semiconductor and Storage TPC8A05-H(TE12L,QM

TPC8A05-H(TE12L,QM

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPC8A05-H(TE12L,QM
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 7882
SKU: TPC8A05-H(TE12L,QM
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSV-H
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 10 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Base Product Number	TPC8A05
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 30 V 10A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)