Toshiba Semiconductor and Storage TPH2010FNH,L1Q

TPH2010FNH,L1Q

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPH2010FNH,L1Q
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: TPH2010FNH,L1Q
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Unit Price: $1.6200

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Base Product Number	TPH2010
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 250 V 5.6A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)