Toshiba Semiconductor and Storage TK46E08N1,S1X

TK46E08N1,S1X

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK46E08N1,S1X
Package: Tube
Datasheet: PDF
Stock: 8836
SKU: TK46E08N1,S1X
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.2400

Ext Price: $1.2400

Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	103W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK46E08
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 80 V 80A (Tc) 103W (Tc) Through Hole TO-220