Parameters |
Mfr |
Rohm Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
180A (Tc) |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
5.6V @ 50mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 10V |
Power - Max |
880W |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
BSM180 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
Q9597863 |
Standard Package |
12 |
Mosfet Array 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module