Toshiba Semiconductor and Storage SSM6K513NU,LF

SSM6K513NU,LF

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6K513NU,LF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: SSM6K513NU,LF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad
Base Product Number	SSM6K513
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 30 V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)