| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
25A (Tc) |
| Rds On (Max) @ Id, Vgs |
175mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
72 nC @ 20 V |
| FET Feature |
- |
| Power Dissipation (Max) |
175W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Supplier Device Package |
D3 |
| Package / Case |
D-3 Module |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
N-Channel 1200 V 25A (Tc) 175W (Tc) Chassis Mount D3