Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Dual), Schottky |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
74A (Tc) |
Rds On (Max) @ Id, Vgs |
50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id |
3V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs |
272nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
5120pF @ 1000V |
Power - Max |
470W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Supplier Device Package |
SP1 |
Base Product Number |
APTSM120 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 74A (Tc) 470W Chassis Mount SP1