| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Dual), Schottky |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
74A (Tc) |
| Rds On (Max) @ Id, Vgs |
50mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id |
3V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs |
272nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds |
5120pF @ 1000V |
| Power - Max |
470W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Supplier Device Package |
SP1 |
| Base Product Number |
APTSM120 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 74A (Tc) 470W Chassis Mount SP1