Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
6 N-Channel (3-Phase Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
112A (Tc) |
Rds On (Max) @ Id, Vgs |
33mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id |
3V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
408nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
7680pF @ 1000V |
Power - Max |
714W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Supplier Device Package |
SP6 |
Base Product Number |
APTSM120 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 112A (Tc) 714W Chassis Mount SP6