Renesas Electronics America Inc NP109N055PUJ-E1B-AY

NP109N055PUJ-E1B-AY

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc NP109N055PUJ-E1B-AY
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3384
SKU: NP109N055PUJ-E1B-AY
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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	110A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 220W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 55 V 110A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263