| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
100mA (Ta) |
| Rds On (Max) @ Id, Vgs |
3.2Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
15.1pF @ 3V |
| Power - Max |
300mW |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Base Product Number |
SSM6N48 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
SSM6N48FURF(D |
| Standard Package |
3,000 |
Mosfet Array 30V 100mA (Ta) 300mW Surface Mount US6