GeneSiC Semiconductor GB50MPS17-247

DIODE SIL CARB 1.7KV 216A TO247

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor GB50MPS17-247
Package: Tube
Datasheet: PDF
Stock: 3521
SKU: GB50MPS17-247
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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	SiC Schottky MPS™
Package	Tube
Product Status	Obsolete
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1700 V
Current - Average Rectified (Io)	216A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 50 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	60 µA @ 1700 V
Capacitance @ Vr, F	3193pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	GB50MPS17
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	1242-1345
Standard Package	30

Diode 1700 V 216A Through Hole TO-247-2