Infineon Technologies IRFSL7434PBF

IRFSL7434PBF

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFSL7434PBF
Package: Tube
Datasheet: PDF
Stock: 3711
SKU: IRFSL7434PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®, StrongIRFET™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	324 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10820 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	294W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	IRFSL7434
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001557628
Standard Package	1,000

N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-262