Vishay Siliconix SISS02DN-T1-GE3

SISS02DN-T1-GE3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SISS02DN-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6
SKU: SISS02DN-T1-GE3
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Unit Price: $1.5200

Ext Price: $1.5200

Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	51A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	4450 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS02
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 25 V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S