Toshiba Semiconductor and Storage TK1K2A60F,S4X

TK1K2A60F,S4X

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK1K2A60F,S4X
Package: Tube
Datasheet: PDF
Stock: 40
SKU: TK1K2A60F,S4X
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK1K2A60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 600 V 6A (Ta) 35W (Tc) Through Hole TO-220SIS