Parameters |
Mfr |
Microsemi Corporation |
Series |
POWER MOS 7® |
Package |
Tube |
Product Status |
Obsolete |
IGBT Type |
PT |
Voltage - Collector Emitter Breakdown (Max) |
900 V |
Current - Collector (Ic) (Max) |
43 A |
Current - Collector Pulsed (Icm) |
60 A |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 15A |
Power - Max |
250 W |
Switching Energy |
200µJ (off) |
Input Type |
Standard |
Gate Charge |
60 nC |
Td (on/off) @ 25°C |
9ns/33ns |
Test Condition |
600V, 15A, 4.3Ohm, 15V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220 [K] |
Base Product Number |
APT15GP90 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
IGBT PT 900 V 43 A 250 W Through Hole TO-220 [K]