Infineon Technologies BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSC109N10NS3GATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 43
SKU: BSC109N10NS3GATMA1
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Unit Price: $1.5900

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	10.9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN
Base Product Number	BSC109
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 100 V 63A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1