Infineon Technologies IRLS3813PBF

IRLS3813PBF

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRLS3813PBF
Package: Tube
Datasheet: PDF
Stock: 4696
SKU: IRLS3813PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.95mOhm @ 148A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8020 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	195W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001576946
Standard Package	1,000

N-Channel 30 V 160A (Tc) 195W (Tc) Surface Mount D2PAK