Toshiba Semiconductor and Storage TPC6113(TE85L,F,M)

TPC6113(TE85L,F,M)

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPC6113(TE85L,F,M)
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9421
SKU: TPC6113(TE85L,F,M)
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	55mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Base Product Number	TPC6113
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

P-Channel 20 V 5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)