Parameters |
Mfr |
Powerex Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Rds On (Max) @ Id, Vgs |
25mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id |
5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs |
500nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
10200pF @ 800V |
Power - Max |
1080W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
QJD1210 |
RoHS Status |
RoHS Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module