Infineon Technologies DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies DF11MR12W1M1B11BOMA1
Package: Tray
Datasheet: PDF
Stock: 1584
SKU: DF11MR12W1M1B11BOMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	-
Package	Tray
Product Status	Obsolete
Technology	Silicon Carbide (SiC)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	50A
Rds On (Max) @ Id, Vgs	23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY1BM-2
Base Product Number	DF11MR12
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	24

Mosfet Array 1200V (1.2kV) 50A 20mW Chassis Mount AG-EASY1BM-2