Toshiba Semiconductor and Storage SSM3J353F,LF

SSM3J353F,LF

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM3J353F,LF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: SSM3J353F,LF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 4.5 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	159 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SSM3J353
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

P-Channel 30 V 2A (Ta) 600mW (Ta) Surface Mount S-Mini