Vishay Siliconix SI7703EDN-T1-E3

SI7703EDN-T1-E3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI7703EDN-T1-E3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1176
SKU: SI7703EDN-T1-E3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Vgs (Max)	±12V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Base Product Number	SI7703
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

P-Channel 20 V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8