Vishay Siliconix SI5509DC-T1-E3

SI5509DC-T1-E3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI5509DC-T1-E3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6017
SKU: SI5509DC-T1-E3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.1A, 4.8A
Rds On (Max) @ Id, Vgs	52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V
Power - Max	4.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™
Base Product Number	SI5509
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™