Parameters |
Mfr |
WeEn Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
1700 V |
Current - Continuous Drain (Id) @ 25°C |
7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
15V, 18V |
Rds On (Max) @ Id, Vgs |
1Ohm @ 1A, 18V |
Vgs(th) (Max) @ Id |
4.2V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 18 V |
Vgs (Max) |
+22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
225 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
79W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-3 |
Package / Case |
TO-247-3 |
Base Product Number |
WNSC2 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
240 |
N-Channel 1700 V 7A (Ta) 79W (Ta) Through Hole TO-247-3