IXYS IXFQ24N50P2

IXFQ24N50P2

Manufacturer: IXYS
Manufacturer's number: IXYS IXFQ24N50P2
Package: Tube
Datasheet: PDF
Stock: 3061
SKU: IXFQ24N50P2
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Details

Parameters
Mfr	IXYS
Series	HiPerFET™, PolarP2™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2890 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	480W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3
Base Product Number	IXFQ24
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	-IXFQ24N50P2
Standard Package	30

N-Channel 500 V 24A (Tc) 480W (Tc) Through Hole TO-3P