Toshiba Semiconductor and Storage TK6R7P06PL,RQ

TK6R7P06PL,RQ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK6R7P06PL,RQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 19
SKU: TK6R7P06PL,RQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 23A, 10V
Vgs(th) (Max) @ Id	2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	66W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TK6R7P06
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 60 V 46A (Tc) 66W (Tc) Surface Mount DPAK