Parameters |
HTSUS |
8541.29.0095 |
Standard Package |
75 |
Mfr |
onsemi |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
146mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
20 nC @ 5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
700 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
1.28W (Ta), 56.6W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I-PAK |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
NTD66 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK