Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
4 N-Channel |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
1A |
Rds On (Max) @ Id, Vgs |
700mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Power - Max |
1.4W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300", 7.62mm) |
Supplier Device Package |
MO-036AB |
Base Product Number |
2N733 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 100V 1A 1.4W Through Hole MO-036AB