| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
4 N-Channel |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
1A |
| Rds On (Max) @ Id, Vgs |
700mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Power - Max |
1.4W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
14-DIP (0.300", 7.62mm) |
| Supplier Device Package |
MO-036AB |
| Base Product Number |
2N733 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
Mosfet Array 100V 1A 1.4W Through Hole MO-036AB