Microsemi Corporation JAN2N6766T1

JAN2N6766T1

Manufacturer: Microsemi Corporation
Manufacturer's number: Microsemi Corporation JAN2N6766T1
Package: Bulk
Datasheet: PDF
Stock: 2716
SKU: JAN2N6766T1
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Details

Parameters
Standard Package	1
Mfr	Microsemi Corporation
Series	Military, MIL-PRF-19500/543
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-254AA
Package / Case	TO-254-3, TO-254AA (Straight Leads)
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-254AA