Parameters |
Mfr |
Microsemi Corporation |
Series |
POWER MOS 8™ |
Package |
Bulk |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) Asymmetrical |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
500V |
Current - Continuous Drain (Id) @ 25°C |
51A |
Rds On (Max) @ Id, Vgs |
78mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id |
5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs |
340nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
10800pF @ 25V |
Power - Max |
390W |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Supplier Device Package |
SP3 |
Base Product Number |
APTM50 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 500V 51A 390W Chassis Mount SP3