Parameters | |
---|---|
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Supplier Device Package | SP3 |
Base Product Number | APTM10 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1 |
Mfr | Microsemi Corporation |
Series | POWER MOS V® |
Package | Bulk |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FET Feature | - |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 139A |
Rds On (Max) @ Id, Vgs | 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
Power - Max | 390W |