| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Diode Configuration |
2 Independent |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
600 V |
| Current - Average Rectified (Io) (per Diode) |
90A |
| Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 90 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
1.8 mA @ 600 V |
| Operating Temperature - Junction |
-40°C ~ 175°C |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Supplier Device Package |
SP1 |
| Base Product Number |
APTDC902 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
OBSOLETE |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
Diode Array 2 Independent 600 V 90A Chassis Mount SP1