Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Diode Configuration |
2 Independent |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
600 V |
Current - Average Rectified (Io) (per Diode) |
90A |
Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 90 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
1.8 mA @ 600 V |
Operating Temperature - Junction |
-40°C ~ 175°C |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Supplier Device Package |
SP1 |
Base Product Number |
APTDC902 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
OBSOLETE |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Diode Array 2 Independent 600 V 90A Chassis Mount SP1