Parameters |
Mfr |
GeneSiC Semiconductor |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
8000 V |
Current - Average Rectified (Io) |
50mA |
Voltage - Forward (Vf) (Max) @ If |
4.6 V @ 50 mA |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
3.8 µA @ 8000 V |
Capacitance @ Vr, F |
25pF @ 1V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
Axial |
Supplier Device Package |
- |
Operating Temperature - Junction |
-55°C ~ 175°C |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.10.0070 |
Other Names |
1242-1257 |
Standard Package |
10 |
Diode 8000 V 50mA Through Hole