Microsemi Corporation JANTXV2N6766

JANTXV2N6766

Manufacturer: Microsemi Corporation
Manufacturer's number: Microsemi Corporation JANTXV2N6766
Package: Bulk
Datasheet: PDF
Stock: 8612
SKU: JANTXV2N6766
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Details

Parameters
Mfr	Microsemi Corporation
Series	Military, MIL-PRF-19500/543
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AE
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3