Parameters |
Mfr |
Microchip Technology |
Series |
POWER MOS 8™ |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
4 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C |
19A |
Rds On (Max) @ Id, Vgs |
552mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id |
5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
Power - Max |
357W |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Supplier Device Package |
SP3 |
Base Product Number |
APTM100 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 1000V (1kV) 19A 357W Chassis Mount SP3