Microsemi Corporation JAN2N6796

JAN2N6796

Manufacturer: Microsemi Corporation
Manufacturer's number: Microsemi Corporation JAN2N6796
Package: Bulk
Datasheet: -
Stock: 4104
SKU: JAN2N6796
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Details

Parameters
Mfr	Microsemi Corporation
Series	Military, MIL-PRF-19500/557
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	195mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28.51 nC @ 10 V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-39
Package / Case	TO-205AF Metal Can
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39