Toshiba Semiconductor and Storage TK10Q60W,S1VQ

TK10Q60W,S1VQ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK10Q60W,S1VQ
Package: Tube
Datasheet: PDF
Stock: 75
SKU: TK10Q60W,S1VQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Stub Leads, IPak
Base Product Number	TK10Q60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	75

N-Channel 600 V 9.7A (Ta) 80W (Tc) Through Hole I-Pak