Toshiba Semiconductor and Storage TRS12E65C,S1Q
TRS12E65C,S1Q
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage TRS12E65C,S1Q
- Package: Tube
- Datasheet: -
- Stock: 1727
- SKU: TRS12E65C,S1Q
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 170 V |
| Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | TRS12E65 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 50 |
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
Diode 650 V 12A Through Hole TO-220-2L
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