NXP USA Inc. PMN28UN,135

MOSFET N-CH 12V 5.7A 6TSOP

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PMN28UN,135
Package: Bulk
Datasheet: PDF
Stock: 16
SKU: PMN28UN,135
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Details

Parameters
Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	34mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	10.1 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 12 V 5.7A (Tc) 1.75W (Tc) Surface Mount 6-TSOP